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Dopants and Defects in Semiconductors Second Edition

Dopants and Defects in Semiconductors  Second Edition Author Matthew D. McCluskey
ISBN-10 9781351977975
Release 2018-02-19
Pages 350
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Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Defects in Semiconductors

Defects in Semiconductors Author
ISBN-10 9780128019405
Release 2015-06-08
Pages 458
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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

III Nitride Semiconductors Electrical Structural and Defects Properties

III Nitride Semiconductors  Electrical  Structural and Defects Properties Author M.O. Manasreh
ISBN-10 0080534449
Release 2000-12-06
Pages 464
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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Theory of Defects in Semiconductors

Theory of Defects in Semiconductors Author David A. Drabold
ISBN-10 3540822704
Release 2009-09-02
Pages 295
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This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow’s tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

Hydrogen in Semiconductors

Hydrogen in Semiconductors Author Jacques I. Pankove
ISBN-10 0080864317
Release 1991-04-23
Pages 648
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Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Non Stoichiometry in Semiconductors

Non Stoichiometry in Semiconductors Author K.J. Bachmann
ISBN-10 9780444600271
Release 2012-12-02
Pages 336
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Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development.

Rare Earth and Transition Metal Doping of Semiconductor Materials

Rare Earth and Transition Metal Doping of Semiconductor Materials Author Volkmar Dierolf
ISBN-10 9780081000601
Release 2016-01-23
Pages 470
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Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Imperfections and Impurities in Semiconductor Silicon

Imperfections and Impurities in Semiconductor Silicon Author K. V. Ravi
ISBN-10 UOM:39015002917170
Release 1981
Pages 379
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Imperfections and Impurities in Semiconductor Silicon has been writing in one form or another for most of life. You can find so many inspiration from Imperfections and Impurities in Semiconductor Silicon also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Imperfections and Impurities in Semiconductor Silicon book for free.

Charged Semiconductor Defects

Charged Semiconductor Defects Author Edmund G. Seebauer
ISBN-10 9781848820593
Release 2008-11-14
Pages 298
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Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Handbook of Silicon Semiconductor Metrology

Handbook of Silicon Semiconductor Metrology Author Alain C. Diebold
ISBN-10 9780203904541
Release 2001-06-29
Pages 896
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Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay, acoustic film thickness, dopant dose, junction depth, and electrical measurements; particle and defect detection; and flatness following chemical mechanical polishing. Providing examples of well-developed metrology capability, the book focuses on metrology for lithography, transistor, capacitor, and on-chip interconnect process technologies.

Advanced Calculations for Defects in Materials

Advanced Calculations for Defects in Materials Author Audrius Alkauskas
ISBN-10 9783527638536
Release 2011-05-16
Pages 402
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This book investigates the possible ways of improvement by applying more sophisticated electronic structure methods as well as corrections and alternatives to the supercell model. In particular, the merits of hybrid and screened functionals, as well as of the +U methods are assessed in comparison to various perturbative and Quantum Monte Carlo many body theories. The inclusion of excitonic effects is also discussed by way of solving the Bethe-Salpeter equation or by using time-dependent DFT, based on GW or hybrid functional calculations. Particular attention is paid to overcome the side effects connected to finite size modeling. The editors are well known authorities in this field, and very knowledgeable of past developments as well as current advances. In turn, they have selected respected scientists as chapter authors to provide an expert view of the latest advances. The result is a clear overview of the connections and boundaries between these methods, as well as the broad criteria determining the choice between them for a given problem. Readers will find various correction schemes for the supercell model, a description of alternatives by applying embedding techniques, as well as algorithmic improvements allowing the treatment of an ever larger number of atoms at a high level of sophistication.

Physical Chemistry of Semiconductor Materials and Processes

Physical Chemistry of Semiconductor Materials and Processes Author
ISBN-10 9781118514603
Release 2015-08-17
Pages 416
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The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Defects in Optoelectronic Materials

Defects in Optoelectronic Materials Author Kazumi Wada
ISBN-10 9056997149
Release 2001-11-06
Pages 379
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Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

Identification of Defects in Semiconductors

Identification of Defects in Semiconductors Author
ISBN-10 008086449X
Release 1998-10-27
Pages 434
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GENERAL DESCRIPTION OF THE SERIES Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUME This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

The Materials Science of Semiconductors

The Materials Science of Semiconductors Author Angus Rockett
ISBN-10 9780387686509
Release 2007-11-20
Pages 622
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This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.

Selected Semiconductor Research

Selected Semiconductor Research Author Ming-Fu Li
ISBN-10 9781848164062
Release 2011
Pages 508
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This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.

Intrinsic Point Defects Impurities and Their Diffusion in Silicon

Intrinsic Point Defects  Impurities  and Their Diffusion in Silicon Author Peter Pichler
ISBN-10 9783709105979
Release 2012-12-06
Pages 554
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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.