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Ferroelectric Memories

Ferroelectric Memories Author James F. Scott
ISBN-10 9783662043073
Release 2013-06-29
Pages 248
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This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

Springer Handbook of Condensed Matter and Materials Data

Springer Handbook of Condensed Matter and Materials Data Author Werner Martienssen
ISBN-10 9783540304371
Release 2006-09-21
Pages 1121
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Springer Handbook of Condensed Matter and Materials Data provides a concise compilation of data and functional relationships from the fields of solid-state physics and materials in this 1200 page volume. The data, encapsulated in 914 tables and 1025 illustrations, have been selected and extracted primarily from the extensive high-quality data collection Landolt-Börnstein and also from other systematic data sources and recent publications of physical and technical property data. Many chapters are authored by Landolt-Börnstein editors, including the prominent Springer Handbook editors, W. Martienssen and H. Warlimont themselves. The Handbook is designed to be useful as a desktop reference for fast and easy retrieval of essential and reliable data in the lab or office. References to more extensive data sources are also provided in the book and by interlinking to the relevant sources on the enclosed CD-ROM. Physicists, chemists and engineers engaged in fields of solid-state sciences and materials technologies in research, development and application will appreciate the ready access to the key information coherently organized within this wide-ranging Handbook. From the reviews: "...this is the most complete compilation I have ever seen... When I received the book, I immediately searched for data I never found elsewhere..., and I found them rapidly... No doubt that this book will soon be in every library and on the desk of most solid state scientists and engineers. It will never be at rest." -Physicalia Magazine

Ferroelectric Gate Field Effect Transistor Memories

Ferroelectric Gate Field Effect Transistor Memories Author Byung-Eun Park
ISBN-10 9789402408416
Release 2016-09-02
Pages 347
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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Springer Handbook of Materials Data

Springer Handbook of Materials Data Author Hans Warlimont
ISBN-10 9783319697437
Release 2018-07-27
Pages 1140
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The second edition of this well-received handbook is the most concise yet comprehensive compilation of materials data. The chapters provide succinct descriptions and summarize essential and reliable data for various types of materials. The information is amply illustrated with 900 tables and 1050 figures selected primarily from well-established data collections, such as Landolt-Börnstein, which is now part of the SpringerMaterials database. The new edition of the Springer Handbook of Materials Data starts by presenting the latest CODATA recommended values of the fundamental physical constants and provides comprehensive tables of the physical and physicochemical properties of the elements. 25 chapters collect and summarize the most frequently used data and relationships for numerous metals, nonmetallic materials, functional materials and selected special structures such as liquid crystals and nanostructured materials. Along with careful updates to the content and the inclusion of timely and extensive references, this second edition includes new chapters on polymers, materials for solid catalysts and low-dimensional semiconductors. This handbook is an authoritative reference resource for engineers, scientists and students engaged in the vast field of materials science.

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics Author
ISBN-10 UCSD:31822032891731
Release 2006
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Japanese Journal of Applied Physics has been writing in one form or another for most of life. You can find so many inspiration from Japanese Journal of Applied Physics also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Japanese Journal of Applied Physics book for free.

VLSI Memory Chip Design

VLSI Memory Chip Design Author Kiyoo Itoh
ISBN-10 9783662044780
Release 2013-04-17
Pages 495
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A systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold current reduction, memory subsystem designs for modern DRAMs, and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

Large Area and Flexible Electronics

Large Area and Flexible Electronics Author Mario Caironi
ISBN-10 9783527679997
Release 2015-01-13
Pages 592
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From materials to applications, this ready reference covers the entire value chain from fundamentals via processing right up to devices, presenting different approaches to large-area electronics, thus enabling readers to compare materials, properties and performance. Divided into two parts, the first focuses on the materials used for the electronic functionality, covering organic and inorganic semiconductors, including vacuum and solution-processed metal-oxide semiconductors, nanomembranes and nanocrystals, as well as conductors and insulators. The second part reviews the devices and applications of large-area electronics, including flexible and ultra-high-resolution displays, light-emitting transistors, organic and inorganic photovoltaics, large-area imagers and sensors, non-volatile memories and radio-frequency identification tags. With its academic and industrial viewpoints, this volume provides in-depth knowledge for experienced researchers while also serving as a first-stop resource for those entering the field.

High Permittivity Gate Dielectric Materials

High Permittivity Gate Dielectric Materials Author Samares Kar
ISBN-10 9783642365355
Release 2013-06-25
Pages 489
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"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Textures of Materials ICOTOM 13

Textures of Materials   ICOTOM 13 Author Dong Nyung Lee
ISBN-10 UOM:39015051623372
Release 2002
Pages 1794
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Textures of Materials ICOTOM 13 has been writing in one form or another for most of life. You can find so many inspiration from Textures of Materials ICOTOM 13 also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Textures of Materials ICOTOM 13 book for free.

Ferroelectricity at the Nanoscale

Ferroelectricity at the Nanoscale Author Vladimir Fridkin
ISBN-10 9783642410079
Release 2013-10-25
Pages 122
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The investigation of nanosized ferroelectric films and ferroelectric nanocrystals has attracted much attention during the past 15 – 20 years. There is interest in the fundamental and applied aspects. The theoretical basis is connected with the development of the Landau-Ginzburg-Devonshire (LGD) mean field and the first principles theories to the ultrathin ferroelectric films with thickness in the vicinity of critical size. Important potential applications are possible nanosize ferroelectric films in non-volatile memories, microelectronics, sensors, pyroelectric and electro-optic devices. This new area of research of ferroelectricity is still in impetuous development and far from completion. Many topics elucidated need generalization. The book contains theory and experimental data for a wide range of ferroelectric materials.


JJAP Author
ISBN-10 UCSD:31822036065837
Release 2008
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JJAP has been writing in one form or another for most of life. You can find so many inspiration from JJAP also informative, and entertaining. Click DOWNLOAD or Read Online button to get full JJAP book for free.

CMOS Circuits for Piezoelectric Energy Harvesters

CMOS Circuits for Piezoelectric Energy Harvesters Author Thorsten Hehn
ISBN-10 9789401792882
Release 2014-07-30
Pages 204
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This book deals with the challenge of exploiting ambient vibrational energy which can be used to power small and low-power electronic devices, e.g. wireless sensor nodes. Generally, particularly for low voltage amplitudes, low-loss rectification is required to achieve high conversion efficiency. In the special case of piezoelectric energy harvesting, pulsed charge extraction has the potential to extract more power compared to a single rectifier. For this purpose, a fully autonomous CMOS integrated interface circuit for piezoelectric generators which fulfills these requirements is presented. Due to these key properties enabling universal usage, other CMOS designers working in the field of energy harvesting will be encouraged to use some of the shown structures for their own implementations. The book is unique in the sense that it highlights the design process from scratch to the final chip. Hence, it gives the designer a comprehensive guide of how to (i) setup an appropriate harvester model to get realistic simulation results, (ii) design the integrated circuits for low power operation, (iii) setup a laboratory measurement environment in order to extensively characterize the chip in combination with the real harvester and finally, (iv) interpret the simulation/measurement results in order to improve the chip performance. Since the dimensions of all devices (transistors, resistors etc.) are given, readers and other designers can easily re-use the presented circuit concepts.

Materials for Information Technology

Materials for Information Technology Author Ehrenfried Zschech
ISBN-10 9781846282355
Release 2006-07-02
Pages 508
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This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

American Book Publishing Record

American Book Publishing Record Author
ISBN-10 UOM:39015058396683
Release 1985-01-01
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American Book Publishing Record has been writing in one form or another for most of life. You can find so many inspiration from American Book Publishing Record also informative, and entertaining. Click DOWNLOAD or Read Online button to get full American Book Publishing Record book for free.

Nanoscale Phenomena in Ferroelectric Thin Films

Nanoscale Phenomena in Ferroelectric Thin Films Author Seungbum Hong
ISBN-10 9781441990440
Release 2013-11-27
Pages 288
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This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.

Ferroelectrics 2000 UK

Ferroelectrics 2000 UK Author Neil McN. Alford
ISBN-10 1861251351
Release 2000
Pages 226
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The three-day meeting on Ferroelectrics was held as part of The Institute of Materials Congress 2000 in Cirencester . A very wide range of high quality papers was presented covering processing, structural analysis, modelling mechanical and electrical behaviour, MEMs and sensors. This proceedings volume contains peer-reviewed submissions which provide a broad overview of developments in these important materials.

CMOS Circuits for Electromagnetic Vibration Transducers

CMOS Circuits for Electromagnetic Vibration Transducers Author Dominic Maurath
ISBN-10 9789401792721
Release 2014-09-16
Pages 300
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Chip-integrated power management solutions are a must for ultra-low power systems. This enables not only the optimization of innovative sensor applications. It is also essential for integration and miniaturization of energy harvesting supply strategies of portable and autonomous monitoring systems. The book particularly addresses interfaces for energy harvesting, which are the key element to connect micro transducers to energy storage elements. Main features of the book are: - A comprehensive technology and application review, basics on transducer mechanics, fundamental circuit and control design, prototyping and testing, up to sensor system supply and applications. - Novel interfacing concepts - including active rectifiers, MPPT methods for efficient tracking of DC as well as AC sources, and a fully-integrated charge pump for efficient maximum AC power tracking at sub-100μW ultra-low power levels. The chips achieve one of widest presented operational voltage range in standard CMOS technology: 0.44V to over 4.1V. - Two special chapters on analog circuit design – it studies benefits and obstacles on implemented chip prototypes with three goals: ultra- low power, wide supply voltage range, and integration with standard technologies. Alternative design approaches are pursued using bulk-input transistor stages in forward-bias operation for amplifiers, modulators, and references. - Comprehensive Appendix – with additional fundamental analysis, design and scaling guidelines, circuit implementation tables and dimensions, schematics, source code listings, bill of material, etc. The discussed prototypes and given design guidelines are tested with real vibration transducer devices. The intended readership is graduate students in advanced courses, academics and lecturers, R&D engineers.