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Semiconductors and Semimetals

Semiconductors and Semimetals Author Robert K. Willardson
ISBN-10 012752116X
Release 1966
Pages 489
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Semiconductors and Semimetals has been writing in one form or another for most of life. You can find so many inspiration from Semiconductors and Semimetals also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Semiconductors and Semimetals book for free.



Gallium Nitride GaN II

Gallium Nitride  GaN  II Author
ISBN-10 0080864554
Release 1998-10-22
Pages 489
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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.



GaN based Materials and Devices

GaN based Materials and Devices Author Michael Shur
ISBN-10 9812562362
Release 2004
Pages 284
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The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.



Gallium Nitride GaN

Gallium Nitride  GaN Author
ISBN-10 0127521585
Release 1998
Pages 517
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Gallium Nitride GaN has been writing in one form or another for most of life. You can find so many inspiration from Gallium Nitride GaN also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Gallium Nitride GaN book for free.



Epitaxy

Epitaxy Author Marian A. Herman
ISBN-10 9783662070642
Release 2013-03-09
Pages 525
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In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.



Semiconductors and Semimetals

Semiconductors and Semimetals Author Eicke R. Weber
ISBN-10 UCSC:32106015730754
Release 2001
Pages
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Semiconductors and Semimetals has been writing in one form or another for most of life. You can find so many inspiration from Semiconductors and Semimetals also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Semiconductors and Semimetals book for free.



Electrical Optical and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy

Electrical  Optical  and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy Author Robert David Armitage
ISBN-10 UCAL:C3486159
Release 2003
Pages 426
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Electrical Optical and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy has been writing in one form or another for most of life. You can find so many inspiration from Electrical Optical and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Electrical Optical and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy book for free.



Spectroscopic Characterization of Radiation induced Defects in Gallium Nitride

Spectroscopic Characterization of Radiation induced Defects in Gallium Nitride Author
ISBN-10 UCAL:C3500387
Release 2005
Pages 294
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Spectroscopic Characterization of Radiation induced Defects in Gallium Nitride has been writing in one form or another for most of life. You can find so many inspiration from Spectroscopic Characterization of Radiation induced Defects in Gallium Nitride also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Spectroscopic Characterization of Radiation induced Defects in Gallium Nitride book for free.



GaN and Related Alloys 1999

GaN and Related Alloys   1999 Author Thomas H. Myers
ISBN-10 UCSD:31822028476422
Release 2000-05-05
Pages 1040
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.



Handbook of Thin Film Materials Semiconductor and superconductor thin films

Handbook of Thin Film Materials  Semiconductor and superconductor thin films Author Hari Singh Nalwa
ISBN-10 0125129122
Release 2002
Pages 705
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Handbook of Thin Film Materials Semiconductor and superconductor thin films has been writing in one form or another for most of life. You can find so many inspiration from Handbook of Thin Film Materials Semiconductor and superconductor thin films also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Handbook of Thin Film Materials Semiconductor and superconductor thin films book for free.



Journal

Journal Author American Chemical Society
ISBN-10 NYPL:33433068514573
Release 2004
Pages
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Journal has been writing in one form or another for most of life. You can find so many inspiration from Journal also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Journal book for free.



Nitride Semiconductor Devices

Nitride Semiconductor Devices Author Joachim Piprek
ISBN-10 9783527406678
Release 2007
Pages 496
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This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. The first part of the book covers electronic, optical, and thermal material parameters of nitride semiconductors that are employed in device models.



Optical Constants of Crystalline and Amorphous Semiconductors

Optical Constants of Crystalline and Amorphous Semiconductors Author Sadao Adachi
ISBN-10 9781461552475
Release 2013-11-27
Pages 714
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Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.



GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion Author Alex Lidow
ISBN-10 9781118844786
Release 2014-06-26
Pages 272
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Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.



Quantum Semiconductor Structures

Quantum Semiconductor Structures Author Claude Weisbuch
ISBN-10 9780080515571
Release 2014-06-28
Pages 252
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In its original form, this widely acclaimed primer on the fundamentals of quantized semiconductor structures was published as an introductory chapter in Raymond Dingle's edited volume (24) of Semiconductors and Semimetals. Having already been praised by reviewers for its excellent coverage, this material is now available in an updated and expanded "student edition." This work promises to become a standard reference in the field. It covers the basics of electronic states as well as the fundamentals of optical interactions and quantum transport in two-dimensional quantized systems. This revised student edition also includes entirely new sections discussing applications and one-dimensional and zero-dimensional systems. Available for the first time in a new, expanded version Provides a concise introduction to the fundamentals and fascinating applications of quantized semiconductor structures



Advances in Semiconductor Lasers

Advances in Semiconductor Lasers Author James J. Coleman
ISBN-10 9780123910660
Release 2012
Pages 526
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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Written and edited by internationally renowned experts Relevent to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.



Carbon Nanotubes

Carbon Nanotubes Author Thomas W. Ebbesen
ISBN-10 0849396026
Release 1996-10-09
Pages 304
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Nanomaterials are destined to become a discipline as distinct and important as polymers are in chemistry! With the realization that the structure of molecules such as C60 and C70 followed simple geometric principles, it became clear that a great variety of hollow, closed carbon structures, including nanotubes, could be made along the same principles. The modern nanotube can be thought of as the ultimate fiber formed of perfectly closed, seamless shells having unique features, such as mechanical and electronic properties that are very sensitive to its geometry and its dimensions. The nanotube has many uses: