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Semiconductor Devices Physics and Technology 3rd Edition

Semiconductor Devices  Physics and Technology  3rd Edition Author Simon M. Sze
ISBN-10 9781118139837
Release 2012-04-23
Pages 592
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The awaited revision of Semiconductor Devices: Physics and Technology offers more than 50% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing. Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.



SEMICONDUCTOR DEVICES PHYSICS AND TECHNOLOGY 2ND ED

SEMICONDUCTOR DEVICES  PHYSICS AND TECHNOLOGY  2ND ED Author S.M.Sze
ISBN-10 812651681X
Release 2008-06-01
Pages 572
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Market_Desc: · Electrical Engineers· Scientists Special Features: · Provides strong coverage of all key semiconductor devices. Includes basic physics and material properties of key semiconductors· Covers all important processing technologies About The Book: This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.



Physics and Technology of Semiconductor Devices

Physics and Technology of Semiconductor Devices Author A. S. Grove
ISBN-10 0471329983
Release 1967-01-15
Pages 388
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Provides a comprehensive treatment of semiconductor device physics and technology, with emphasis on modern planar silicon devices. Physical principles are explained by the use of simple physical models and illustrated by experimental measurements.



Selected Solutions for Semiconductor Devices

Selected Solutions for Semiconductor Devices Author S. M. Sze
ISBN-10 0471829536
Release 1985
Pages 70
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Selected Solutions for Semiconductor Devices has been writing in one form or another for most of life. You can find so many inspiration from Selected Solutions for Semiconductor Devices also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Selected Solutions for Semiconductor Devices book for free.



Physics of Semiconductor Devices

Physics of Semiconductor Devices Author Simon M. Sze
ISBN-10 9780470068304
Release 2006-11-03
Pages 832
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The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.



Modern semiconductor device physics

Modern semiconductor device physics Author S. M. Sze
ISBN-10 UOM:39015040577390
Release 1998
Pages 556
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An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells. Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.



Physics of Semiconductor Devices

Physics of Semiconductor Devices Author S. M. Sze
ISBN-10 UOM:39015036320318
Release 1981-09-30
Pages 868
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Semicondutor physics; Bipolar devices; Unipolar devices; Special microwave devices; Photonic devices; International system of units; Unit prefixes; Greek alphabet; Physical constants; Lattice constants; Propeties of important semiconductors; Properties of Ge, Si, and GaAs at 300K; Properties of Si02 and Si3NA at 300K.



Semiconductor Device Physics and Design

Semiconductor Device Physics and Design Author Umesh Mishra
ISBN-10 9781402064814
Release 2007-11-06
Pages 559
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Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.



Semiconductor Devices Physics and Technology

Semiconductor Devices  Physics and Technology Author S. M. Sze
ISBN-10 8126556757
Release 2013
Pages 582
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Semiconductor Devices Physics and Technology has been writing in one form or another for most of life. You can find so many inspiration from Semiconductor Devices Physics and Technology also informative, and entertaining. Click DOWNLOAD or Read Online button to get full Semiconductor Devices Physics and Technology book for free.



GaAs High Speed Devices

GaAs High Speed Devices Author C. Y. Chang
ISBN-10 047185641X
Release 1994-09-30
Pages 612
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GaAs High-Speed Devices provides a comprehensive state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible - as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail.



Compound Semiconductors

Compound Semiconductors Author Ferdinand Scholz
ISBN-10 9781351858717
Release 2017-10-06
Pages 294
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This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.



Physics and Technology of Crystalline Oxide Semiconductor CAAC IGZO

Physics and Technology of Crystalline Oxide Semiconductor CAAC IGZO Author Noboru Kimizuka
ISBN-10 9781119247401
Release 2016-10-17
Pages 344
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Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium–gallium–zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC-IGZO in flat-panel displays and LSI devices. Key features: Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO Presents crystallographic overviews of IGZO and related compounds. Offers an in-depth understanding of CAAC-IGZO. Explains the fabrication method of CAAC-IGZO thin films. Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience. Describes the manufacturing process the CAAC-IGZO transistors and introduces the device application using CAAC-IGZO.



Semiconductor Device Physics and Simulation

Semiconductor Device Physics and Simulation Author J.S. Yuan
ISBN-10 9781489919045
Release 2013-11-22
Pages 336
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The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.



SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES Author NANDITA DASGUPTA
ISBN-10 812032398X
Release 2004-01-01
Pages 344
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Aimed primarily at the undergraduate students pursuing courses in semiconductor physics and semiconductor devices, this text emphasizes the physical understanding of the underlying principles of the subject. Since engineers use semiconductor devices as circuit elements, device models commonly used in the circuit simulators, e.g. SPICE, have been discussed in detail. Advanced topics such as lasers, heterojunction bipolar transistors, second order effects in BJTs, and MOSFETs are also covered. With such in-depth coverage and a practical approach, practising engineers and PG students can also use this book as a ready reference.



Germanium Based Technologies

Germanium Based Technologies Author Cor Claeys
ISBN-10 008047490X
Release 2011-07-28
Pages 480
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Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications



Gallium Nitride GaN

Gallium Nitride  GaN Author Farid Medjdoub
ISBN-10 9781482220049
Release 2017-12-19
Pages 372
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.



Hot Electrons in Semiconductors

Hot Electrons in Semiconductors Author N. Balkan
ISBN-10 0198500580
Release 1998
Pages 512
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Since the arrival of the transistor in 1947, research in hot electrons, like any field in semiconductor research, has grown at a stunning rate. From a physicist's point of view the understanding of hot electrons and their interactions with the lattice has always been a challenging problem of condensed matter physics. Recently, with the advent of novel fabrication techniques such as electron beam or plasma etching and the advanced growth techniques such as the molecular beam epitaxy (MBE)and metallo-organic chemical vapour deposition (MOCVD), it has become possible to fabricate semiconductor devices with sub-micron dimensions where the electrons are confined to two (quantum well), one (quantum wire) or zero (quantum dot) dimensions. In devices of such dimensions a few volts applied to the device result in the setting up of very high electric fields, hence a substantial heating of electrons. Thus electronic transport in the device becomes non- linear and can no longer be described using the simple equations of Ohm's law. The understanding of the operations of such devices, and the realisations of more advanced ones make it necessary to understand the dynamics of hot electrons. There is an obvious lack of good reference books on hot electrons in semiconductors. The few that exist either cover a very narrow field or are becoming quite outdated. This book is therefore written with the aim of filling the vacuum in an area where there is much demand for a comprehensive reference book. The book is intended for both established researchers and graduate students, and gives a complete account of the historical development of the subject, together with current research interests and future trends. The contributions are written by leading scientists in the field. They cover the physics of hot electrons in bulk and low dimensional device technology. The material is organised into subject area that can be classified broadly into five groups: (1)introduction and overview, (2)hot electron phonon interactions and the ultra-fast phenomena in bulk and two dimensional structures, (3)hot electrons in both long and short quantum wires and quantum dots, (4) hot electron tunnelling and hot electron transport in superlattices, and (5) novel devices based on hot electron transport. The chapters are grouped according to subject matter as far as possible. However, although there is much overlap of ideas and concepts, each chapter is essentially independent of the others.